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SiC MOSFET

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SiC MOSFET

650V 40mΩ Generatio Secunda Automotiva SiC MOSFET
650V 40mΩ Generatio Secunda Automotiva SiC MOSFET

650V 40mΩ Generatio Secunda Automotiva SiC MOSFET

Accipe Citatum Datasheet

  • Introductio

Introductio

Locus Originis:

Zhejiang

Nomen Notae:

Inventchip

Numerus Moduli:

IV2Q06040D7Z

Certificatio:

AEC-Q101 qualificationem adeptus

Minima Quantitas Emballatio:

450

IV2Q06040D7Z-1.jpgIV2Q06040D7Z-2.jpgIV2Q06040D7Z-3.jpgIV2Q06040D7Z-4.jpgIV2Q06040D7Z-5.jpgIV2Q06040D7Z-6.jpgIV2Q06040D7Z-7.jpgIV2Q06040D7Z-8.jpgIV2Q06040D7Z-9.jpg

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