IV1B12013HA1L - 1200V 13mohm SiC MODULE Solar

Locus Origin:	Zhejiang
Notam nomen:	Inventchip Technology
Model Number:	IV1B12013HA1L
Certification:	AEC-Q101

Features

• Maximum interclusio intentione humili resistitur

• Maximum celeritatem commutatione humilis capacitatem

• Princeps operating facultatem temperatus coniunctas

• Celerrimus et robustus corpus intrinsecum diode

Applications

• Solarium applicationes

• UPS systema

• Motor coegi

• Princeps intentione DC/DC converters

sarcina

Vestigium Diagram

Maximum Ratings absoluta(TC=25°C nisi aliud certum)

symbol	Parameter	Value	Unit	test Conditions	Nota
VDS	Exhaurire-Fource voltage	1200	V
VGSmax (DC)	Maximum DC voltage	-5 ad 22	V	Static (DC)
VGSmax (Spike)	Maxime spiculum voltage	-10 ad 25	V	<1% officium cycli et pulsus latitudo <200ns
VGSon	Commendatur rursus -on voltage	20 ± 0.5	V
VGSoff	Commendatur rursus -off voltage	-3.5 ad -2	V
ID	Exhaurire vena (continua)	96	A	VGS = 20V, Th = 50°C, Tvj≤150℃
		102	A	VGS = 20V, Th = 50°C, Tvj≤175℃
IDM	Exhaurire current (pulsus)	204	A	Pulsus latitudo limitatur SOA	Fig.26
PTOT	Summa virtus dissipationis	210	W	Tvj≤150℃	Fig.24
Tstg	At temperatus range	-40 ad 150	° F
TJ	Maximam virtualis coniunctas temperatus sub commutatione conditionibus	-40 ad 150	° F	Operatio
		-55 ad 175	° F	Intermittendi cum reducta vita

Scelerisque Data

symbol	Parameter	Value	Unit	Nota
Rθ(JH)	Scelerisque resistitur adiunctae ad Heatsink	0.596	F / W	Fig.25

electrica proprietates(TC=25°C nisi aliud certum)

symbol	Parameter	Value			Unit	test Conditions	Nota
		Min.	Typ.	Max.
IDSS	Nulla porta voltage exhaurire current		10	200	* pneu =	VDS = 1200V, VGS = 0V
IGSS	Porta ultrices cursus			± 200	nA	VDS = 0V, VGS = -5~20V
VTH CARD	Porta limina voltage	1.8	3.2	5	V	VGS=VDS , ID = 24mA	Fig.9
			2.3			VGS=VDS , ID = 24mA @ TC = 150。C
Ron	Static exhauriunt fonte on- resistentia		12.5	16.3	mΩ	VGS = 20V, ID = 80A @TJ = 25。C	Fig.4-7
			18		mΩ	VGS = 20V, ID = 80A @TJ = 150。C
ciss	Input facultatem		11		nF	VDS=800V, VGS =0V, f=100kHZ, VAC=25mV	Fig.16
Coss	facultatem output		507		pF
Crss	Reverse translationem facultatem		31		pF
Eoss	Coss industria stored		203		μJ		Fig.17
Qg	Summa portae crimen		480		nC	VDS = 800V, ID = 80A, VGS = 5 ad 20V .	Fig.18
Qgs	Porta fons crimen		100		nC
Qgd	Portae crimen exhaurire		192		nC
Rg	Porta input resistentia		1.0		Ω	f=100kHZ
EON	Turn-in commutatione industria		783		μJ	VDS =600V, ID =60A, VGS=-5 to 20V, RG(ext)on/ RG(ext)off =2.5Ω/1.43Ω, L=120μH	Fig.19-22
EOFF	Turn-off switching navitas		182		μJ
td (on)	Turn-in mora tempus		30		ns
tr	ortum temporis		5.9
td (off)	Turn-off mora temporis		37
tf	Fall tempus		21
LsCE	Inductione errant		7.6		nH

Reverse Diode Characteres(TC=25°C nisi aliud certum)

symbol	Parameter	Value			Unit	test Conditions	Nota
		Min.	Typ.	Max.
VSD	Diode deinceps voltage		4.9		V	ISD = 80A, VGS = 0V	Fig.10- 12
			4.5		V	ISD = 80A, VGS = 0V, TJ = 150°C
trr*	Reverse recuperatio tempore		17.4		ns	VGS =-5V/+20V, ISD =60A, VR =600V, di/dt=13.28A/ns, RG(ext) =2.5Ω, L=120μH
Qrr	Reverse crimen recuperatio		1095		nC
IRRM	Apicem vicissim recuperatio current		114		A

NTC Thermistor Characteres

symbol	Parameter	Value			Unit	test Conditions	Nota
		Min.	Typ.	Max.
RNTC	Rated Resistentia		5		AG	TNTC =25℃	Fig.27
R/R	Resistentia tolerantia ad 25℃	-5		5	%
β25/50	Beta Value		3380		K	± 1%
Pmax	Potentia dissipatio		5		mW

Typical euismod (curvis)

         

Sarcina Dimensiones (mm)