650V 25mΩ Gen2 Automotive SiC MOSFET

Features

Applications

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Vestigium Diagram:

Maximum Ratings absoluta(TC=25°C nisi aliud certum)

symbol	Parameter	Value	Unit	test Conditions	Nota
VDS	Exhaurire-Fource voltage	650	V	VGS = 0V, ID = 100μA
VGSmax (DC)	Maximum DC voltage	-5 ad 20	V	Static (DC)
VGSmax (Spike)	Maxime spiculum voltage	-10 ad 23	V	Officium cycli <1%, et pulsus latitudo <200ns
VGSon	Commendatur rursus in voltage	18 ± 0.5	V
VGSoff	Commendatur rursus-off voltage	-3.5 ad -2	V
ID	Exhaurire vena (continua)	99	A	VGS = 18V, TC = 25°C	P. I
		72	A	VGS = 18V, TC = 100°C
IDM	Exhaurire current (pulsus)	247	A	Pulsus latitudo limitatur SOA	P. I
PTOT	Summa virtus dissipationis	454	W	TC = 25°C	P. I
Tstg	At temperatus range	-55 ad 175	° F
TJ	Operans junctionemmperature	-55 ad 175	° F
TL	Solder Temperature	260	° F	fluctus solidatorium solum permisit ad ducit, 1.6mm ex casu pro 10 s

Scelerisque Data

symbol	Parameter	Value	Unit	Nota
Rθ(JC)	Scelerisque resistitur adiunctae ad Case	0.33	F / W	P. I

electrica proprietates(TC = 25。C nisi aliud certum)

symbol	Parameter	Value			Unit	test Conditions	Nota
symbol	Parameter	Min.	Typ.	Max.	Unit	test Conditions	Nota
IDSS	Nulla porta voltage exhaurire current		3	100	* pneu =	VDS = 650V, VGS = 0V
IGSS	Porta ultrices cursus			± 100	nA	VDS = 0V, VGS = -5~20V
VTH CARD	Porta limina voltage	1.8	2.8	4.5	V	VGS=VDS , ID = 12mA	Fig
VTH CARD	Porta limina voltage		2.0			VGS= VDS , ID = 12mA @ TJ=175。C	Fig
Ron	Static exhauriunt fonte on- resistentia		25	33	mΩ	VGS = 18V, ID = 40A @TJ = 25。C	Fig
Ron	Static exhauriunt fonte on- resistentia		38		mΩ	VGS = 18V, ID = 40A @TJ = 175。C	Fig
ciss	Input facultatem		3090		pF	VDS=600V, VGS =0V, f=1MHz, VAC=25mV	P. I
Coss	facultatem output		251		pF
Crss	Reverse translationem facultatem		19		pF
Eoss	Coss industria stored		52		μJ		P. I
Qg	Summa portae crimen		125		nC	VDS = 400V, ID = 40A, VGS = 3 ad 18V .	P. I
Qgs	Porta fons crimen		35.7		nC
Qgd	Portae crimen exhaurire		38.5		nC
Rg	Porta input resistentia		1.5		Ω	f=1 MHz
EON	Turn-in commutatione industria		218.8		μJ	VDS =400V, ID =40A, VGS =-3.5 to 18V, RG(ext) =3.3Ω, L=200μH TJ =25。C	Fig
EOFF	Turn-off switching navitas		95.0		μJ
td (on)	Turn-in mora tempus		12.9		ns
tr	ortum temporis		26.5
td (off)	Turn-off mora temporis		23.2
tf	Fall tempus		11.7
EON	Turn-in commutatione industria		248.5		μJ	VDS =400V, ID =40A, VGS =-3.5 to 18V, RG(ext) =3.3Ω, L=200μH TJ =175。C	P. I
EOFF	Turn-off switching navitas		99.7		μJ		P. I

Reverse Diode Characteres(TC = 25。C nisi aliud certum)

symbol	Parameter	Value			Unit	test Conditions	Nota
symbol	Parameter	Min.	Typ.	Max.	Unit	test Conditions	Nota
VSD	Diode deinceps voltage		3.7		V	ISD = 20A, VGS = 0V	Fig
VSD	Diode deinceps voltage		3.5		V	ISD = 20A, VGS = 0V, TJ=175。C	Fig
trr*	Reverse recuperatio tempore		32		ns	VGS =-3.5V/+18V, ISD =40A, VR =400V, RG(ext) =7.5Ω L=200μH di/dt=3000A/μs
Qrr	Reverse crimen recuperatio		195.3		nC
IRRM	Apicem vicissim recuperatio current		20.2		A