1700V 1000mΩ SiC MOSFET Solarium inverters

Locus Origin:	Zhejiang
Notam nomen:	Inventchip Technology
Model Number:	IV2Q171R0D7Z
Certification:	AEC-Q101 quid

Features

• 2 nd Generation SiC MOSFET Technology with +15~+18V porta coegi

• Maximum interclusio intentione humili resistitur

• Maximum celeritatem commutatione humilis capacitatem

• 175, capacitas temperatura coniunctas operandi

• Ultra ieiunium et robustum corpus intrinsecum diode

• Kelvin porta input easing circuit design

• AEC-Q101 quid

Applications

• solaris inverters

• Auxilia potentiae commeatus

• Modus virtutis switch copia

• Dolor metris

Boetii:

 

Vestigium Diagram:

Maximum Ratings absoluta(TC=25°C nisi aliud certum)

symbol	Parameter	Value	Unit	test Conditions	Nota
VDS	Exhaurire-Fource voltage	1700	V	VGS = 0V, ID = 10μA
VGSmax (Transient)	Maxime spiculum voltage	-10 ad 23	V	Officium cycli <1%, et latitudo leguminis <200ns
VGSon	Commendatur rursus in voltage	15 ad 18	V
VGSoff	Commendatur rursus-off voltage	-5 ad -2	V	Typical valorem -3.5V
ID	Exhaurire vena (continua)	6.3	A	VGS = 18V, TC = 25°C	P. I
		4.8	A	VGS = 18V, TC = 100°C
IDM	Exhaurire current (pulsus)	15.7	A	Pulsus latitudo limitatur SOA et dynamica Rθ (JC)	Fig
ISM	Corpus vena diode (pulsus)	15.7	A	Pulsus latitudo limitatur SOA et dynamica Rθ (JC)	Fig
PTOT	Summa virtus dissipationis	73	W	TC = 25°C	P. I
Tstg	At temperatus range	-55 ad 175	° F
TJ	Operans junctionemmperature	-55 ad 175	° F

Scelerisque Data

symbol	Parameter	Value	Unit	Nota
Rθ(JC)	Scelerisque resistitur adiunctae ad Case	2.05	F / W	P. I

electrica proprietates(TC = 25°C nisi aliud certum)

symbol	Parameter	Value			Unit	test Conditions	Nota
		Min.	Typ.	Max.
IDSS	Nulla porta voltage exhaurire current		1	10	* pneu =	VDS = 1700V, VGS = 0V
IGSS	Porta ultrices cursus			± 100	nA	VDS = 0V, VGS = -5~20V
VTH CARD	Porta limina voltage	1.8	3.0	4.5	V	VGS = VDS , ID = 380uA	Fig
			2.0		V	VGS = VDS , ID = 380uA @ TJ = 175° C
Ron	Static drain-source on-resistentia		700 1280	910	mΩ	VGS=18V, ID=1A @TJ =25°C @TJ=175°C	Fig
			950 1450	1250	mΩ	VGS=15V, ID=1A @TJ =25°C @TJ=175°C
ciss	Input facultatem		285		pF	VDS = 1000V, VGS = 0V, f=1MHz, VAC=25mV	P. I
Coss	facultatem output		15.3		pF
Crss	Reverse translationem facultatem		2.2		pF
Eoss	Coss industria stored		11		μJ		P. I
Qg	Summa portae crimen		16.5		nC	VDS = 1000V, ID=1A, VGS = -5 ad 18V .	P. I
Qgs	Porta fons crimen		2.7		nC
Qgd	Portae crimen exhaurire		12.5		nC
Rg	Porta input resistentia		13		Ω	f=1 MHz
EON	Turn-in commutatione industria		51.0		μJ	VDS =1000V, ID =2A, VGS =-3.5V to 18V, RG(ext) =10Ω, L=2330μH Tj=25°C	Fig
EOFF	Turn-off switching navitas		17.0		μJ
td (on)	Turn-in mora tempus		4.8		ns
tr	ortum temporis		13.2
td (off)	Turn-off mora temporis		12.0
tf	Fall tempus		66.8
EON	Turn-in commutatione industria		90.3		μJ	VDS =1000V, ID =2A, VGS =-3.5V to 18V, RG(ext) =10Ω, L=2330μH Tj=175°C	P. I

Reverse Diode Characteres(TC = 25。C nisi aliud certum)

symbol	Parameter	Value			Unit	test Conditions	Nota
		Min.	Typ.	Max.
VSD	Diode deinceps voltage		4.0		V	ISD = 1A, VGS = 0V	Fig
			3.8		V	ISD=1A, VGS = 0V, TJ=175。C
IS	Diode deinceps vena (continua)			11.8	A	VGS =-2V, TC = 25。C .
				6.8	A	VGS = -2V, TC=100。C
trr*	Reverse recuperatio tempore		20.6		ns	VGS=-3.5V/+18V, ISD =2A, VR =1000V, RG(ext)=10Ω  L=2330μ H di/dt=5000A/μs
Qrr	Reverse crimen recuperatio		54.2		nC
IRRM	Apicem vicissim recuperatio current		8.2		A

Typical euismod (curvis)

 

Dimensiones package

Nota:

1. Package Reference: JEDEC TO263, Variatio AD

2. Omnes dimensiones in mm

3. Quantum ad mutationem sine Notitia