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SiC MOSFET

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SiC MOSFET

1200V 80mΩ Generatio Secunda Automotivus SiC MOSFET Motoris impulsores
1200V 80mΩ Generatio Secunda Automotivus SiC MOSFET Motoris impulsores

1200V 80mΩ Generatio Secunda Automotivus SiC MOSFET Motoris impulsores

Accipe Citatum Datasheet

  • Introductio

Introductio
Locus Originis: Zhejiang
Nomen Notae: Inventchip Technologia
Numerus Moduli: IV2Q12080D7Z
Certificatio: AEC-Q101 qualificationem adeptus

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