domum / Products / Components / Sic MOSFET
| Locus Origin: | Shanghai |
| Notam nomen: | Inventchip Technology |
| Model Number: | IV2Q12040T4Z |
| Certification: | AEC-Q101 |
Features
2ndGeneratio SiC MOSFET Technology with
+15~+18V porta coegi
Maximum interclusio intentione humili resistitur
Maximum celeritatem commutatione humilis capacitatem
175° C adiunctio operating facultatem temperatus
Ultra ieiunium et robustum corpus intrinsecum diode
Kelvin porta input easing circuit design
AEC-Q101 quid
Applications
EV phiala et OBCs
Solaris boosters
Automotive compressor inverters
AC/DC imperium commeatus
Boetii:
Vestigium Diagram:
Maximum Ratings absoluta(TC=25°C nisi aliud certum)
| symbol | Parameter | Value | Unit | test Conditions | Nota |
| VDS | Exhaurire-Fource voltage | 1200 | V | VGS = 0V, ID = 100μA | |
| VGSmax (Transient) | Maxime transiens voltage | -10 ad 23 | V | Officium cycli <1%, et pulsus latitudo <200ns | |
| VGSon | Commendatur rursus in voltage | 15 ad 18 | V | ||
| VGSoff | Commendatur rursus-off voltage | -5 ad -2 | V | Typical -3.5V | |
| ID | Exhaurire vena (continua) | 65 | A | VGS = 18V, TC = 25°C | P. I |
| 48 | A | VGS = 18V, TC = 100°C | |||
| IDM | Exhaurire current (pulsus) | 162 | A | Pulsus latitudo limitatur SOA et dynamica Rθ (JC) | Fig |
| ISM | Corpus vena diode (pulsus) | 162 | A | Pulsus latitudo limitatur SOA et dynamica Rθ (JC) | Fig |
| PTOT | Summa virtus dissipationis | 375 | W | TC = 25°C | P. I |
| Tstg | At temperatus range | -55 ad 175 | ° F | ||
| TJ | Operans junctionemmperature | -55 ad 175 | ° F | ||
| TL | Solder Temperature | 260 | ° F | fluctus solidatorium solum permisit ad ducit, 1.6mm ex casu pro 10 s |
Scelerisque Data
| symbol | Parameter | Value | Unit | Nota |
| Rθ(JC) | Scelerisque resistitur adiunctae ad Case | 0.4 | F / W | P. I |
Characteres electrici (TC = 25。C nisi aliud certum)
| symbol | Parameter | Value | Unit | test Conditions | Nota | ||
| Min. | Typ. | Max. | |||||
| IDSS | Nulla porta voltage exhaurire current | 5 | 100 | * pneu = | VDS = 1200V, VGS = 0V | ||
| IGSS | Porta ultrices cursus | ± 100 | nA | VDS = 0V, VGS = -5~20V | |||
| VTH CARD | Porta limina voltage | 1.8 | 2.8 | 4.5 | V | VGS = VDS , ID = 9mA | Fig |
| 2.1 | VGS = VDS , ID = 9mA @ TJ=175。C | ||||||
| Ron | Static drain-source on-resistentia | 40 | 52 | mΩ | VGS = 18V, ID = 20A @TJ = 25。C | Fig | |
| 75 | mΩ | VGS = 18V, ID = 20A @TJ = 175。C | |||||
| 50 | 65 | mΩ | VGS = 15V, ID = 20A @TJ = 25。C | ||||
| 80 | mΩ | VGS = 15V, ID = 20A @TJ = 175。C | |||||
| ciss | Input facultatem | 2160 | pF | VDS=800V, VGS =0V, f=1MHz, VAC=25mV | P. I | ||
| Coss | facultatem output | 100 | pF | ||||
| Crss | Reverse translationem facultatem | 5.8 | pF | ||||
| Eoss | Coss industria stored | 40 | μJ | P. I | |||
| Qg | Summa portae crimen | 110 | nC | VDS = 800V, ID = 30A, VGS = 3 ad 18V . | P. I | ||
| Qgs | Porta fons crimen | 25 | nC | ||||
| Qgd | Portae crimen exhaurire | 59 | nC | ||||
| Rg | Porta input resistentia | 2.1 | Ω | f=1 MHz | |||
| EON | Turn-in commutatione industria | 446.3 | μJ | VDS =800V, ID =30A, VGS =-3.5 to 18V, RG(ext) =3.3Ω, L=200μH TJ =25。C | Fig | ||
| EOFF | Turn-off switching navitas | 70.0 | μJ | ||||
| td (on) | Turn-in mora tempus | 9.6 | ns | ||||
| tr | ortum temporis | 22.1 | |||||
| td (off) | Turn-off mora temporis | 19.3 | |||||
| tf | Fall tempus | 10.5 | |||||
| EON | Turn-in commutatione industria | 644.4 | μJ | VDS =800V, ID =30A, VGS =-3.5 to 18V, RG(ext) =3.3Ω,L=200μH TJ =175。C | P. I | ||
| EOFF | Turn-off switching navitas | 73.8 | μJ | ||||
Reverse Diode Characteres (TC = 25。C nisi aliud certum)
| symbol | Parameter | Value | Unit | test Conditions | Nota | ||
| Min. | Typ. | Max. | |||||
| VSD | Diode deinceps voltage | 4.2 | V | ISD = 20A, VGS = 0V | Fig | ||
| 4.0 | V | ISD = 20A, VGS = 0V, TJ=175。C | |||||
| IS | Diode deinceps vena (continua) | 63 | A | VGS =-2V, TC = 25。C . | |||
| 36 | A | VGS = -2V, TC=100。C | |||||
| trr* | Reverse recuperatio tempore | 42.0 | ns | VGS=-3.5V/+18V, ISD =30A, VR =800V, RG(ext) =10Ω L=200μH di/dt=3000A/μs | |||
| Qrr | Reverse crimen recuperatio | 198.1 | nC | ||||
| IRRM | Apicem vicissim recuperatio current | 17.4 | A | ||||
Typical euismod (curvis)
Dimensiones package
Nota:
1. Package Reference: JEDEC TO247, Variatio AD
2. Omnes dimensiones in mm
3. Slote required, SCARIFICATIO rotundi
4. Dimensio D & E non includunt Mico Flash
5. Quantum ad mutationem sine Notitia
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