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1200V 40A Automotive SiC Schottky Diode
1200V 40A Automotive SiC Schottky Diode

1200V 40A Automotive SiC Schottky Diode

  • Introduction

Introduction

Locus Origin:Zhejiang
Notam nomen:Inventchip Technology
Model Number:IV1D12040U3Z
Certification:AEC-Q101 quid


Minimumpacking Quantity:450PCS
Price:
Packaging Details:
Tempus adferendi:
Pensio conditio:
Facultates copiam:


Features

  • Max Junction Temperature 175°C

  • Princeps Surge Current Capacity

  • Nulla inversa Recuperatio Current

  • Nulla Vestibulum Recuperatio Voltage

  • Summus Frequency Operatio

  • Temperatus independens mutandi mores

  • Positivus Temperature Coefficiens in VF

  • AEC-Q101 quid


Applications

  • Automotive Inverter Free Wheeling Diocles

  • EV patina Piles

  • Viennae 3-Phase PFC

  • Virtutis solaris Boost

  • Modus switch Power Victualia 


CIRCUMCAESURA

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Vestigium Diagram

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Maximum Ratings absoluta(TC=25°C nisi aliud certum est)

symbolParameterValueUnit
VRRMReverse voltage (repetita apicem)1200V
VDCDC claudebant voltage1200V
IFPraesens vena (continua) @Tc=25°C54 *A
Praesens vena (continua) @Tc=135°C28 *A
Praesens vena (continua) @Tc=151°C20 *A
IFSMSurge non repetita deinceps vena sine dimidia parte @ Tc=25°C tp=10ms140 *A
IFRMSurge repetita deinceps vena (Freq=0.1Hz, 100cycles) sine medietate @Tamb = 25°C tp=10ms115 *A
PtotTotalis potentia dissipationis @ Tc=25°C272 *W
Totalis potentia dissipationis @ Tc=150°C45 *
I2t value @Tc=25°C tp=10ms98 *A2s
TstgAt temperatus range-55 ad 175° F
TjConiunctio operating range temperatus-55 ad 175° F

*Per Leg

Extensio extollit eos qui in mensa Maximi Ratings recensentur, artificio laedere possunt. Si qui ex his limitibus excesserint, fabrica

functionality ne assumi possit, detrimentum fieri et constantiam affici posse.


electrica proprietates

symbolParameterTyp.Max.Unittest ConditionsNota
VFDeinceps intentione1.48 *1.8 *VIF = 20 A TJ = 25°CP. I
2.1 *3.0 *IF = 20 A TJ = 175°C
IRReverse Current10 *200 ** pneu =VR = 1200 V TJ = 25°CP. I
45 *800 *VR = 1200 V TJ = 175°C
CTotalis capacitatis1114 *pFVR = 1 V, TJ = 25°C, f = 1 MHz .P. I
100 *VR = 400 V, TJ = 25˚C, f = 1 MHz .
77 *VR = 800 V, TJ = 25˚C, f = 1 MHz .
QCSumma Capacitive præcipe107 *nCVR = 800 V, TJ = 25°C, Qc = C(v)dv*P. I
ECFacultatem Repono Energy31 *μJVR = 800 V, TJ = 25°C, Ec = C(v) vdvP. I

*Per Leg


Characteres scelerisque (Per Leg)


symbolParameterTyp.UnitNota
Rth(jc)Scelerisque resistitur adiunctae ad Case0.55F / WFig.7


Typical euismod (Per Leg)

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Dimensiones package

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Nota:

1. Package Reference: JEDEC TO247, Variatio AD

2. Omnes dimensiones in mm

3. Slote required, SCARIFICATIO rotundi vel rectanguli

4. Dimensio D & E non includunt Mico Flash

5. Quantum ad mutationem sine Notitia

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