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1200V 40A Automotive SiC Schottky Diode
1200V 40A Automotive SiC Schottky Diode

1200V 40A Automotive SiC Schottky Diode

  • Introduction

Introduction

Locus Origin: Zhejiang
Notam nomen: Inventchip Technology
Model Number: IV1D12040U3Z
Certification: AEC-Q101 quid


Minimumpacking Quantity: 450PCS
Price:
Packaging Details:
Tempus adferendi:
Pensio conditio:
Facultates copiam:


Features

  • Max Junction Temperature 175°C

  • Princeps Surge Current Capacity

  • Nulla inversa Recuperatio Current

  • Nulla Vestibulum Recuperatio Voltage

  • Summus Frequency Operatio

  • Temperatus independens mutandi mores

  • Positivus Temperature Coefficiens in VF

  • AEC-Q101 quid


Applications

  • Automotive Inverter Free Wheeling Diocles

  • EV patina Piles

  • Viennae 3-Phase PFC

  • Virtutis solaris Boost

  • Modus switch Power Victualia 


CIRCUMCAESURA

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Vestigium Diagram

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Maximum Ratings absoluta(TC=25°C nisi aliud certum est)

symbol Parameter Value Unit
VRRM Reverse voltage (repetita apicem) 1200 V
VDC DC claudebant voltage 1200 V
IF Praesens vena (continua) @Tc=25°C 54 * A
Praesens vena (continua) @Tc=135°C 28 * A
Praesens vena (continua) @Tc=151°C 20 * A
IFSM Surge non repetita deinceps vena sine dimidia parte @ Tc=25°C tp=10ms 140 * A
IFRM Surge repetita deinceps vena (Freq=0.1Hz, 100cycles) sine medietate @Tamb = 25°C tp=10ms 115 * A
Ptot Totalis potentia dissipationis @ Tc=25°C 272 * W
Totalis potentia dissipationis @ Tc=150°C 45 *
I2t value @Tc=25°C tp=10ms 98 * A2s
Tstg At temperatus range -55 ad 175 ° F
Tj Coniunctio operating range temperatus -55 ad 175 ° F

*Per Leg

Extensio extollit eos qui in mensa Maximi Ratings recensentur, artificio laedere possunt. Si qui ex his limitibus excesserint, fabrica

functionality ne assumi possit, detrimentum fieri et constantiam affici posse.


electrica proprietates

symbol Parameter Typ. Max. Unit test Conditions Nota
VF Deinceps intentione 1.48 * 1.8 * V IF = 20 A TJ = 25°C P. I
2.1 * 3.0 * IF = 20 A TJ = 175°C
IR Reverse Current 10 * 200 * * pneu = VR = 1200 V TJ = 25°C P. I
45 * 800 * VR = 1200 V TJ = 175°C
C Totalis capacitatis 1114 * pF VR = 1 V, TJ = 25°C, f = 1 MHz . P. I
100 * VR = 400 V, TJ = 25˚C, f = 1 MHz .
77 * VR = 800 V, TJ = 25˚C, f = 1 MHz .
QC Summa Capacitive præcipe 107 * nC VR = 800 V, TJ = 25°C, Qc = C(v)dv* P. I
EC Facultatem Repono Energy 31 * μJ VR = 800 V, TJ = 25°C, Ec = C(v) vdv P. I

*Per Leg


Characteres scelerisque (Per Leg)


symbol Parameter Typ. Unit Nota
Rth(jc) Scelerisque resistitur adiunctae ad Case 0.55 F / W Fig.7


Typical euismod (Per Leg)

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Dimensiones package

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Nota:

1. Package Reference: JEDEC TO247, Variatio AD

2. Omnes dimensiones in mm

3. Slote required, SCARIFICATIO rotundi vel rectanguli

4. Dimensio D & E non includunt Mico Flash

5. Quantum ad mutationem sine Notitia

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