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SiC Module

1200V 25mohm SiC MODULE Motor regentes
1200V 25mohm SiC MODULE Motor regentes

1200V 25mohm SiC MODULE Motor regentes

  • Introduction

Introduction

Locus Origin:Zhejiang
Notam nomen:Inventchip Technology
Model Number:IV1B12025HC1L
Certification:AEC-Q101


Features

  • Maximum interclusio intentione humili resistitur

  • Maximum celeritatem commutatione humilis capacitatem

  • Princeps operating facultatem temperatus coniunctas

  • Celerrimus et robustus corpus intrinsecum diode


Applications

  • Solarium applicationes

  • UPS systema

  • Motor coegi

  • Princeps intentione DC/DC converters


sarcina

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Maximum Ratings absoluta(TC=25°C nisi aliud certum)

symbolParameterValueUnittest ConditionsNota
VDSExhaurire-Fource voltage1200VVGS = 0V, ID = 200μA
VGSmax (DC)Maximum DC voltage-5 ad 22VStatic (DC)
VGSmax (Spike)Maxime spiculum voltage-10 ad 25V<1% officium cycli et pulsus latitudo <200ns
VGSonCommendatur rursus -on voltage20 ± 0.5V
VGSoffCommendatur rursus -off voltage-3.5 ad -2V
IDExhaurire vena (continua)74AVGS = 20V, TC = 25°C
50AVGS = 20V, TC = 94°C
IDMExhaurire current (pulsus)185APulsus latitudo limitatur SOAFig.26
PTOTSumma virtus dissipationis250WTC = 25°CFig.24
TstgAt temperatus range-40 ad 150° F
TJMaximam virtualis coniunctas temperatus sub commutatione conditionibus-40 ad 150° FOperatio
-55 ad 175° FIntermittendi cum reducta vita


Scelerisque Data

symbolParameterValueUnitNota
Rθ(JC)Scelerisque resistitur adiunctae ad Case0.5F / WFig.25


electrica proprietates(TC=25°C nisi aliud certum)

symbolParametrValueUnittest ConditionsNota
Min.Typ.Max.
IDSSNulla porta voltage exhaurire current10200* pneu =VDS = 1200V, VGS = 0V
IGSSPorta ultrices cursus2± 200nAVDS = 0V, VGS = -5~20V
VTH CARDPorta limina voltage3.2VVGS=VDS , ID = 12mAFig.9
2.3VGS=VDS , ID = 12mA @ TC = 150。C
RonStatic drain-source on-resistentia2533VGS = 20V, ID = 40A @TJ = 25。CFig.4-7
36VGS = 20V, ID = 40A @TJ = 150。C
cissInput facultatem5.5nFVDS=800V, VGS =0V, f=100kHZ, VAC=25mVFig.16
Cossfacultatem output285pF
CrssReverse translationem facultatem20pF
EossCoss industria stored105μJFig.17
QgSumma portae crimen240nCVDS = 800V, ID = 40A, VGS = 5 ad 20V .Fig.18
QgsPorta fons crimen50nC
QgdPortae crimen exhaurire96nC
RgPorta input resistentia1.4Ωf=100kHZ
EONTurn-in commutatione industria795μJVDS =600V, ID =50A, VGS=-5 to 20V, RG(ext)on/ RG(ext)off =2.5Ω/1.43Ω, L=120μHFig.19-22
EOFFTurn-off switching navitas135μJ
td (on)Turn-in mora tempus15ns
trortum temporis4.1
td (off)Turn-off mora temporis24
tfFall tempus17
LsCEInductione errant8.8nH


Reverse Diode Characteres(TC=25°C nisi aliud certum)

symbolParameterValueUnittest ConditionsNota
Min.Typ.Max.
VSDDiode deinceps voltage4.9VISD = 40A, VGS = 0VFig.10- 12
4.5VISD = 40A, VGS = 0V, TJ = 150°C
trr*Reverse recuperatio tempore18nsVGS =-5V/+20V, ISD =50A, VR =600V, di/dt=14.29A/ns, RG(ext) =2.5Ω, L=120μH
QrrReverse crimen recuperatio1068nC
IRRMApicem vicissim recuperatio current96.3A


NTC Thermistor Characteres

symbolParameterValueUnittest ConditionsNota
Min.Typ.Max.
RNTCRated Resistentia5AGTNTC =25℃Fig.27
R/RResistentia tolerantia ad 25℃-55%
β25/50Beta Value3380K± 1%
PmaxPotentia dissipatio5mW


Typical euismod (curvis)

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Sarcina Dimensiones (mm)

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Notes


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