domum / Products / SiC Module
Locus Origin: | Zhejiang |
Notam nomen: | Inventchip Technology |
Model Number: | IV1B12025HC1L |
Certification: | AEC-Q101 |
Features
Maximum interclusio intentione humili resistitur
Maximum celeritatem commutatione humilis capacitatem
Princeps operating facultatem temperatus coniunctas
Celerrimus et robustus corpus intrinsecum diode
Applications
Solarium applicationes
UPS systema
Motor coegi
Princeps intentione DC/DC converters
sarcina
Maximum Ratings absoluta(TC=25°C nisi aliud certum)
symbol | Parameter | Value | Unit | test Conditions | Nota |
VDS | Exhaurire-Fource voltage | 1200 | V | VGS = 0V, ID = 200μA | |
VGSmax (DC) | Maximum DC voltage | -5 ad 22 | V | Static (DC) | |
VGSmax (Spike) | Maxime spiculum voltage | -10 ad 25 | V | <1% officium cycli et pulsus latitudo <200ns | |
VGSon | Commendatur rursus -on voltage | 20 ± 0.5 | V | ||
VGSoff | Commendatur rursus -off voltage | -3.5 ad -2 | V | ||
ID | Exhaurire vena (continua) | 74 | A | VGS = 20V, TC = 25°C | |
50 | A | VGS = 20V, TC = 94°C | |||
IDM | Exhaurire current (pulsus) | 185 | A | Pulsus latitudo limitatur SOA | Fig.26 |
PTOT | Summa virtus dissipationis | 250 | W | TC = 25°C | Fig.24 |
Tstg | At temperatus range | -40 ad 150 | ° F | ||
TJ | Maximam virtualis coniunctas temperatus sub commutatione conditionibus | -40 ad 150 | ° F | Operatio | |
-55 ad 175 | ° F | Intermittendi cum reducta vita |
Scelerisque Data
symbol | Parameter | Value | Unit | Nota |
Rθ(JC) | Scelerisque resistitur adiunctae ad Case | 0.5 | F / W | Fig.25 |
electrica proprietates(TC=25°C nisi aliud certum)
symbol | Parametr | Value | Unit | test Conditions | Nota | ||
Min. | Typ. | Max. | |||||
IDSS | Nulla porta voltage exhaurire current | 10 | 200 | * pneu = | VDS = 1200V, VGS = 0V | ||
IGSS | Porta ultrices cursus | 2 | ± 200 | nA | VDS = 0V, VGS = -5~20V | ||
VTH CARD | Porta limina voltage | 3.2 | V | VGS=VDS , ID = 12mA | Fig.9 | ||
2.3 | VGS=VDS , ID = 12mA @ TC = 150。C | ||||||
Ron | Static drain-source on-resistentia | 25 | 33 | mΩ | VGS = 20V, ID = 40A @TJ = 25。C | Fig.4-7 | |
36 | mΩ | VGS = 20V, ID = 40A @TJ = 150。C | |||||
ciss | Input facultatem | 5.5 | nF | VDS=800V, VGS =0V, f=100kHZ, VAC=25mV | Fig.16 | ||
Coss | facultatem output | 285 | pF | ||||
Crss | Reverse translationem facultatem | 20 | pF | ||||
Eoss | Coss industria stored | 105 | μJ | Fig.17 | |||
Qg | Summa portae crimen | 240 | nC | VDS = 800V, ID = 40A, VGS = 5 ad 20V . | Fig.18 | ||
Qgs | Porta fons crimen | 50 | nC | ||||
Qgd | Portae crimen exhaurire | 96 | nC | ||||
Rg | Porta input resistentia | 1.4 | Ω | f=100kHZ | |||
EON | Turn-in commutatione industria | 795 | μJ | VDS =600V, ID =50A, VGS=-5 to 20V, RG(ext)on/ RG(ext)off =2.5Ω/1.43Ω, L=120μH | Fig.19-22 | ||
EOFF | Turn-off switching navitas | 135 | μJ | ||||
td (on) | Turn-in mora tempus | 15 | ns | ||||
tr | ortum temporis | 4.1 | |||||
td (off) | Turn-off mora temporis | 24 | |||||
tf | Fall tempus | 17 | |||||
LsCE | Inductione errant | 8.8 | nH |
Reverse Diode Characteres(TC=25°C nisi aliud certum)
symbol | Parameter | Value | Unit | test Conditions | Nota | ||
Min. | Typ. | Max. | |||||
VSD | Diode deinceps voltage | 4.9 | V | ISD = 40A, VGS = 0V | Fig.10- 12 | ||
4.5 | V | ISD = 40A, VGS = 0V, TJ = 150°C | |||||
trr* | Reverse recuperatio tempore | 18 | ns | VGS =-5V/+20V, ISD =50A, VR =600V, di/dt=14.29A/ns, RG(ext) =2.5Ω, L=120μH | |||
Qrr | Reverse crimen recuperatio | 1068 | nC | ||||
IRRM | Apicem vicissim recuperatio current | 96.3 | A |
NTC Thermistor Characteres
symbol | Parameter | Value | Unit | test Conditions | Nota | ||
Min. | Typ. | Max. | |||||
RNTC | Rated Resistentia | 5 | AG | TNTC =25℃ | Fig.27 | ||
R/R | Resistentia tolerantia ad 25℃ | -5 | 5 | % | |||
β25/50 | Beta Value | 3380 | K | ± 1% | |||
Pmax | Potentia dissipatio | 5 | mW |
Typical euismod (curvis)
Sarcina Dimensiones (mm)
Notes
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