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1200V 10A SiC Schottky Diode AC/DC Converters
1200V 10A SiC Schottky Diode AC/DC Converters

1200V 10A SiC Schottky Diode AC/DC Converters

  • Introduction

Introduction

Locus Origin:Zhejiang
Notam nomen:Inventchip Technology
Model Number:IV1D12010T2
Certification:


Minimumpacking Quantity:450PCS
Price:
Packaging Details:
Tempus adferendi:
Pensio conditio:
Facultates copiam:



Features

  • Max Junction Temperature 175°C

  • Princeps Surge Current Capacity

  • Nulla inversa Recuperatio Current

  • Nulla Vestibulum Recuperatio Voltag

  • Summus Frequency Operatio

  • temperatus iuris commutatione mores

  • Positivus Temperature Coefficiens in VF


Applications

  • Virtutis solaris Boost

  • Inverter Free Wheeling Diocles

  • Viennae 3-Phase PFC

  • AC/DC Converters

  • Modus switch Power Victualia


CIRCUMCAESURA

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Vestigium Diagram

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Maximum Ratings absoluta(TC=25°C nisi aliud certum est)


symbolParameterValueUnit
VRRMReverse voltage (repetita apicem)1200V
VDCDC claudebant voltage1200V
IFPraesens vena (continua) @Tc=25°C30A
Praesens vena (continua) @Tc=135°C15.2A
Praesens vena (continua) @Tc=155°C10A
IFSMSurge non repetita deinceps vena sine dimidia parte @ Tc=25°C tp=10ms72A
IFRMSurge repetita deinceps vena (Freq=0.1Hz, 100cycles) sine medietate @Tamb = 25°C tp=10ms56A
PtotTotalis potentia dissipationis @ Tc=25°C176W
Totalis potentia dissipationis @ Tc=150°C29
I2t value @Tc=25°C tp=10ms26A2s
TstgAt temperatus range-55 ad 175° F
TjConiunctio operating range temperatus-55 ad 175° F


Extensio extollit eos qui in mensa Maximi Ratings recensentur, artificio laedere possunt. Si qui ex his limitibus excesserint, ratio functionis non sumi debet, detrimentum fieri potest et firmitas affici potest.


electrica proprietates


symbolParameterTyp.Max.Unittest ConditionsNota
VFDeinceps intentione1.481.7VIF = 10 A TJ = 25°CP. I
2.03.0IF = 10 A TJ = 175°C
IRReverse Current1100* pneu =VR = 1200 V TJ = 25°CP. I
10250VR = 1200 V TJ = 175°C
CTotalis capacitatis575pFVR = 1 V, TJ = 25°C, f = 1 MHz .P. I
59VR = 400 V, TJ = 25˚C, f = 1 MHz .
42.5VR = 800 V, TJ = 25˚C, f = 1 MHz .
QCSumma Capacitive præcipe62nCVR = 800 V, TJ = 25°C, Qc = C(v)dv*P. I
ECFacultatem Repono Energy16.8μJVR = 800 V, TJ = 25°C, Ec = C(v) vdvP. I


Characteres scelerisque


symbolParameterTyp.UnitNota
Rth(jc)Scelerisque resistitur adiunctae ad Case0.85F / WFig.7


Typical euismod

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Dimensiones package

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Nota:

1. Package Reference: JEDEC TO247, Variatio AD 

2. Omnes dimensiones in mm

3. Slote required, SCARIFICATIO rotundi vel rectanguli 

4. Dimensio D & E non includunt Mico Flash

5. Quantum ad mutationem sine Notitia




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