1700V 1000mΩ potestatem Auxiliarem supplet SiC MOSFET

Locus Origin:	Zhejiang
Notam nomen:	Inventchip
Model Number:	IV2Q171R0D7
Minimum quantitatis sarcina:	450

Features

2 nd Generation SiC MOSFET Technology with

+15~+18V porta coegi

Maximum interclusio voltage cum low on-resistentia

Maximum celeritatem commutatione cum humilis capacitatem

175 operating facultatem temperatus coniunctas

Ultra ieiunium et robustum corpus intrinsecum diode

⚫ Kelvin porta input LEVATIO coegi circuit design

Applications

Solaris inverters

Auxilia potentiae commeatus

SWITCH modus virtutis commeatus

Smart metris

Boetii:

Vestigium Diagram:

Maximum Ratings absoluta (TC=25°C nisi aliud certum)

symbol	Parameter	Value	Unit	test Conditions	Nota
VDS	Exhaurire-Fource voltage	1700	V	VGS=0V, ID=10μA
VGSmax (Transient)	Maxime spiculum voltage	-10 ad 23	V	Officium cycli <1%, et latitudo leguminis <200ns
VGSon	Commendatur rursus in voltage	15 ad 18	V
VGSoff	Commendatur rursus-off voltage	-5 ad -2	V	Typical valorem -3.5V
ID	Exhaurire vena (continua)	6.3	A	VGS=18V, TC=25°C	P. 23
ID	Exhaurire vena (continua)	4.8	A	VGS=18V, TC=100°C	P. 23
IDM	Exhaurire current (pulsus)	15.7	A	Pulsus latitudo limitatur SOA et dynamica Rθ (JC)	Fig
ISM	Corpus vena diode (pulsus)	15.7	A	Pulsus latitudo limitatur SOA et dynamica Rθ (JC)	Fig
PTOT	Summa virtus dissipationis	73	W	TC=25°C	P. 24
Tstg	Repono temperatus range	-55 ad 175	° F
TJ	Coniunctio operating temperatus	-55 ad 175	° F

Scelerisque Data

symbol	Parameter	Value	Unit	Nota
Rθ(JC)	Scelerisque resistitur a casu adiunctae	2.05	F / W	P. 25

electrica proprietates (TC=25°C nisi aliud certum)

symbol	Parameter	Value			Unit	test Conditions	Nota
symbol	Parameter	Min.	Typ.	Max.	Unit	test Conditions	Nota
IDSS	Nulla porta voltage exhaurire current		1	10	* pneu =	VDS=1700V, VGS=0V
IGSS	Porta ultrices cursus			± 100	nA	VDS=0V, VGS=-5~20V
VTH CARD	Porta limina voltage	1.8	3.0	4.5	V	VGS=VDS, ID=380uA	Fig
VTH CARD	Porta limina voltage		2.0		V	VGS=VDS, ID=380uA @ TJ=175°C	Fig
Ron	Static exhaurire fons resistentia		700 1280	910	mΩ	VGS=18V, ID=1A @TJ=25°C @TJ=175°C	Fig
Ron	Static exhaurire fons resistentia		950 1450	1250	mΩ	VGS=15V, ID=1A @TJ=25°C @TJ=175°C	Fig
ciss	Input facultatem		285		pF	VDS=1000V, VGS=0V, f=1MHz, VAC=25mV	P. 16
Coss	facultatem output		15.3		pF
Crss	Reverse translationem facultatem		2.2		pF
Eoss	Coss industria stored		11		μJ		P. 17
Qg	Totalis crimen porta		16.5		nC	VDS=1000V, ID=1A, VGS=-5 ad 18V .	P. 18
Qgs	Porta fons crimen		2.7		nC
Qgd	Portae crimen exhaurire		12.5		nC
Rg	Porta input resistentia		13		Ω	f=1 MHz
EON	Turn-in commutatione industria		51.0		μJ	VDS=1000V, ID=2A, VGS=-3.5V ad 18V, RG(ext)=10Ω, L=2330μH Tj=25°C	Fig
EOFF	Turn-off switching navitas		17.0		μJ
td (on)	Turn-in mora tempus		4.8		ns
tr	ortum temporis		13.2
td (off)	Turn-off mora temporis		12.0
tf	Fall tempus		66.8
EON	Turn-in commutatione industria		90.3		μJ	VDS=1000V, ID=2A, VGS=-3.5V ad 18V, RG(ext)=10Ω, L=2330μH Tj=175°C	P. 22
EOFF	Turn-off switching navitas		22.0		μJ		P. 22

Reverse Diode Characteres (TC=25°C nisi aliud certum)

symbol	Parameter	Value			Unit	test Conditions	Nota
symbol	Parameter	Min.	Typ.	Max.	Unit	test Conditions	Nota
VSD	Diode deinceps voltage		4.0		V	ISD=1A, VGS=0V	Fig. 10, 11, 12 .
VSD	Diode deinceps voltage		3.8		V	ISD=1A, VGS=0V, TJ=175°C	Fig. 10, 11, 12 .
IS	Diode deinceps vena (continua)			11.8	A	VGS=-2V, TC=25°C
IS	Diode deinceps vena (continua)			6.8	A	VGS=-2V, TC=100°C
trr*	Reverse recuperatio tempore		20.6		ns	VGS=-3.5V/+18V, ISD=2A, VR=1000V, RG(ext)=10Ω L=2330μH di/dt=5000A/μs
Qrr	Reverse crimen recuperatio		54.2		nC
IRRM	Apicem vicissim recuperatio current		8.2		A