domum / Products / Sic MOSFET
| Locus Origin: | Zhejiang |
| Notam nomen: | Inventchip Technology |
| Model Number: | IV2Q12030D7Z |
| Certification: | AEC-Q101 quid |
Features
2 nd Generation SiC MOSFET Technology cum + 18V porta coegi
Maximum interclusio intentione humili resistitur
Maximum celeritatem commutatione humilis capacitatem
Princeps operating facultatem temperatus coniunctas
Celerrimus et robustus corpus intrinsecum diode
Kelvin porta input easing circuit design
Applications
Motor coegi
solaris inverters
Automotiva DC/DC converters
Automotive compressor inverters
Modus virtutis switch copia
Boetii:
Vestigium Diagram:
Maximum Ratings absoluta(TC=25°C nisi aliud specificatum)
| symbol | Parameter | Value | Unit | test Conditions | Nota |
| VDS | Exhaurire-Fource voltage | 1200 | V | VGS = 0V, ID = 100μA | |
| VGSmax (DC) | Maximum DC voltage | -5 ad 20 | V | Static (DC) | |
| VGSmax (Spike) | Maxime spiculum voltage | -10 ad 23 | V | Officium cycli <1%, et pulsus latitudo <200ns | |
| VGSon | Commendatur rursus in voltage | 18 ± 0.5 | V | ||
| VGSoff | Commendatur rursus-off voltage | -3.5 ad -2 | V | ||
| ID | Exhaurire vena (continua) | 79 | A | VGS = 18V, TC = 25°C | P. I |
| 58 | A | VGS = 18V, TC = 100°C | |||
| IDM | Exhaurire current (pulsus) | 198 | A | Pulsus latitudo limitatur SOA | P. I |
| PTOT | Summa virtus dissipationis | 395 | W | TC = 25°C | P. I |
| Tstg | At temperatus range | -55 ad 175 | ° F | ||
| TJ | Operans junctionemmperature | -55 ad 175 | ° F | ||
| TL | Solder Temperature | 260 | ° F | fluctus solidatorium solum permisit ad ducit, 1.6mm ex casu pro 10 s |
Scelerisque Data
| symbol | Parameter | Value | Unit | Nota |
| Rθ(JC) | Scelerisque resistitur adiunctae ad Case | 0.38 | F / W | P. I |
electrica proprietates(TC = 25。C nisi aliud certum)
| symbol | Parameter | Value | Unit | test Conditions | Nota | ||
| Min. | Typ. | Max. | |||||
| IDSS | Nulla porta voltage exhaurire current | 5 | 100 | * pneu = | VDS = 1200V, VGS = 0V | ||
| IGSS | Porta ultrices cursus | ± 100 | nA | VDS = 0V, VGS = -5~20V | |||
| VTH CARD | Porta limina voltage | 1.8 | 2.8 | 4.5 | V | VGS=VDS , ID = 12mA | Fig |
| 2.0 | VGS= VDS , ID = 12mA @ TJ=175。C | ||||||
| Ron | Static drain-source on-resistentia | 30 | 39 | mΩ | VGS = 18V, ID = 30A @TJ = 25。C | Fig | |
| 55 | mΩ | VGS = 18V, ID = 30A @TJ = 175。C | |||||
| 36 | 47 | mΩ | VGS = 15V, ID = 30A @TJ = 25。C | ||||
| 58 | mΩ | VGS = 15V, ID = 30A @TJ = 175。C | |||||
| ciss | Input facultatem | 3000 | pF | VDS=800V, VGS =0V, f=1MHz, VAC=25mV | P. I | ||
| Coss | facultatem output | 140 | pF | ||||
| Crss | Reverse translationem facultatem | 7.7 | pF | ||||
| Eoss | Coss industria stored | 57 | μJ | P. I | |||
| Qg | Summa portae crimen | 135 | nC | VDS = 800V, ID = 40A, VGS = 3 ad 18V . | P. I | ||
| Qgs | Porta fons crimen | 36.8 | nC | ||||
| Qgd | Portae crimen exhaurire | 45.3 | nC | ||||
| Rg | Porta input resistentia | 2.3 | Ω | f=1 MHz | |||
| EON | Turn-in commutatione industria | 856.6 | μJ | VDS =800V, ID =40A, VGS =-3.5 to 18V, RG(ext) =3.3Ω, L=200μH TJ =25。C | Fig | ||
| EOFF | Turn-off switching navitas | 118.0 | μJ | ||||
| td (on) | Turn-in mora tempus | 15.4 | ns | ||||
| tr | ortum temporis | 24.6 | |||||
| td (off) | Turn-off mora temporis | 28.6 | |||||
| tf | Fall tempus | 13.6 | |||||
Reverse Diode Characteres(TC = 25。C nisi aliud certum)
| symbol | Parameter | Value | Unit | test Conditions | Nota | ||
| Min. | Typ. | Max. | |||||
| VSD | Diode deinceps voltage | 4.2 | V | ISD = 30A, VGS = 0V | Fig | ||
| 4.0 | V | ISD = 30A, VGS = 0V, TJ=175。C | |||||
| trr* | Reverse recuperatio tempore | 54.8 | ns | VGS=-3.5V/+18V, ISD =40A, VR =800V, RG(ext) =13Ω L=200μH di/dt=3000A/μs | |||
| Qrr | Reverse crimen recuperatio | 470.7 | nC | ||||
| IRRM | Apicem vicissim recuperatio current | 20.3 | A | ||||
Typical euismod (curvis)
EN
AR
HR
DA
NL
FR
DE
EL
HI
IT
JA
KO
NON
PL
PT
RO
RU
ES
SV
TL
IW
ID
LT
SR
SK
UK
VI
SQ
HU
TH
TR
FA
AF
MS
HY
BN
LA
TA
TE
MY
