1200V 160mΩ Gen2 Automotive SiC MOSFET

Features

Applications

Boetii:

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Vestigium Diagram:

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Maximum Ratings absoluta(TC=25°C nisi aliud certum)

symbol	Parameter	Value	Unit	test Conditions	Nota
VDS	Exhaurire-Fource voltage	1200	V	VGS = 0V, ID = 100μA
VGSmax (DC)	Maximum DC voltage	-5 ad 20	V	Static (DC)
VGSmax (Spike)	Maxime spiculum voltage	-10 ad 23	V	Officium cycli <1%, et pulsus latitudo <200ns
VGSon	Commendatur rursus in voltage	18 ± 0.5	V
VGSoff	Commendatur rursus-off voltage	-3.5 ad -2	V
ID	Exhaurire vena (continua)	19	A	VGS = 18V, TC = 25°C	P. I
		14	A	VGS = 18V, TC = 100°C
IDM	Exhaurire current (pulsus)	47	A	Pulsus latitudo limitatur SOA	P. I
PTOT	Summa virtus dissipationis	136	W	TC = 25°C	P. I
Tstg	At temperatus range	-55 ad 175	° F
TJ	Operans junctionemmperature	-55 ad 175	° F
TL	Solder Temperature	260	° F	fluctus solidatorium solum permisit ad ducit, 1.6mm ex casu pro 10 s

Scelerisque Data

symbol	Parameter	Value	Unit	Nota
Rθ(JC)	Scelerisque resistitur adiunctae ad Case	1.1	F / W	P. I

electrica proprietates(TC = 25。C nisi aliud certum)

symbol	Parameter	Value			Unit	test Conditions	Nota
		Min.	Typ.	Max.
IDSS	Nulla porta voltage exhaurire current		5	100	* pneu =	VDS = 1200V, VGS = 0V
IGSS	Porta ultrices cursus			± 100	nA	VDS = 0V, VGS = -5~20V
VTH CARD	Porta limina voltage	1.8	2.8	4.5	V	VGS = VDS , ID = 2mA	Fig
			2.1			VGS = VDS , ID = 2mA @ TJ=175。C
Ron	Static drain-source on-resistentia		160	208	mΩ	VGS = 18V, ID = 5A @TJ = 25。C	Fig
			285		mΩ	VGS = 18V, ID = 5A @TJ = 175。C
ciss	Input facultatem		575		pF	VDS=800V, VGS =0V, f=1MHz, VAC=25mV	P. I
Coss	facultatem output		34		pF
Crss	Reverse translationem facultatem		2.3		pF
Eoss	Coss industria stored		14		μJ		P. I
Qg	Summa portae crimen		29		nC	VDS = 800V, ID = 10A, VGS = 3 ad 18V .	P. I
Qgs	Porta fons crimen		6.6		nC
Qgd	Portae crimen exhaurire		14.4		nC
Rg	Porta input resistentia		10		Ω	f=1 MHz
EON	Turn-in commutatione industria		115		μJ	VDS =800V, ID =10A, VGS =-3.5 to 18V, RG(ext) =3.3Ω, L=300μH TJ =25。C	Fig
EOFF	Turn-off switching navitas		22		μJ
td (on)	Turn-in mora tempus		2.5		ns
tr	ortum temporis		9.5
td (off)	Turn-off mora temporis		7.3
tf	Fall tempus		11.0
EON	Turn-in commutatione industria		194		μJ	VDS =800V, ID =10A, VGS =-3.5 to 18V, RG(ext) =3.3Ω, L=300μH TJ =175。C	P. I
EOFF	Turn-off switching navitas		19		μJ

Reverse Diode Characteres(TC = 25。C nisi aliud certum)

symbol	Parameter	Value			Unit	test Conditions	Nota
symbol	Parameter	Min.	Typ.	Max.	Unit	test Conditions	Nota
VSD	Diode deinceps voltage		4.0		V	ISD = 5A, VGS = 0V	Fig
VSD	Diode deinceps voltage		3.7		V	ISD = 5A, VGS = 0V, TJ=175。C	Fig
trr*	Reverse recuperatio tempore		26		ns	VGS =-3.5V/+18V, ISD =10A, VR =800V, RG(ext) =15Ω L=300μH di/dt=3000A/μs
Qrr	Reverse crimen recuperatio		92		nC
IRRM	Apicem vicissim recuperatio current		10.6		A