Home / Products / SiC Module
Place of Origin: | Zhejiang |
Brand Name: | Inventchip Technology |
Model Number: | IV1B12013HA1L |
Certification: | AEC-Q101 |
Features
High blocking voltage with low on-resistance
High speed switching with low capacitance
High operating junction temperature capability
Very fast and robust intrinsic body diode
Applications
Solar applications
UPS system
Motor drivers
High voltage DC/DC converters
Package
Marking Diagram
Absolute Maximum Ratings(TC=25°C unless otherwise specified)
Symbol | Parameter | Value | Unit | Test Conditions | Note |
VDS | Drain-Source voltage | 1200 | V | ||
VGSmax (DC) | Maximum DC voltage | -5 to 22 | V | Static (DC) | |
VGSmax (Spike) | Maximum spike voltage | -10 to 25 | V | <1% duty cycle, and pulse width<200ns | |
VGSon | Recommended turn -on voltage | 20±0.5 | V | ||
VGSoff | Recommended turn -off voltage | -3.5 to -2 | V | ||
ID | Drain current (continuous) | 96 | A | VGS =20V, Th =50°C, Tvj≤150℃ | |
102 | A | VGS =20V, Th =50°C, Tvj≤175℃ | |||
IDM | Drain current (pulsed) | 204 | A | Pulse width limited by SOA | Fig.26 |
PTOT | Total power dissipation | 210 | W | Tvj≤150℃ | Fig.24 |
Tstg | Storage temperature range | -40 to 150 | °C | ||
TJ | Maximum virtual junction temperature under switching conditions | -40 to 150 | °C | Operation | |
-55 to 175 | °C | Intermittent with reduced life |
Thermal Data
Symbol | Parameter | Value | Unit | Note |
Rθ(J-H) | Thermal Resistance from Junction to Heatsink | 0.596 | °C/W | Fig.25 |
Electrical Characteristics(TC=25°C unless otherwise specified)
Symbol | Parameter | Value | Unit | Test Conditions | Note | ||
Min. | Typ. | Max. | |||||
IDSS | Zero gate voltage drain current | 10 | 200 | μA | VDS =1200V, VGS =0V | ||
IGSS | Gate leakage current | ±200 | nA | VDS =0V, VGS = -5~20V | |||
VTH | Gate threshold voltage | 1.8 | 3.2 | 5 | V | VGS=VDS , ID =24mA | Fig.9 |
2.3 | VGS=VDS , ID =24mA @ TC =150。C | ||||||
RON | Static drain-source on- resistance | 12.5 | 16.3 | mΩ | VGS =20V, ID =80A @TJ =25。C | Fig.4-7 | |
18 | mΩ | VGS =20V, ID =80A @TJ =150。C | |||||
Ciss | Input capacitance | 11 | nF | VDS=800V, VGS =0V, f=100kHZ , VAC =25mV | Fig.16 | ||
Coss | Output capacitance | 507 | pF | ||||
Crss | Reverse transfer capacitance | 31 | pF | ||||
Eoss | Coss stored energy | 203 | μJ | Fig.17 | |||
Qg | Total gate charge | 480 | nC | VDS =800V, ID =80A, VGS =-5 to 20V | Fig.18 | ||
Qgs | Gate-source charge | 100 | nC | ||||
Qgd | Gate-drain charge | 192 | nC | ||||
Rg | Gate input resistance | 1.0 | Ω | f=100kHZ | |||
EON | Turn-on switching energy | 783 | μJ | VDS =600V, ID =60A, VGS=-5 to 20V, RG(ext)on/ RG(ext)off =2.5Ω/1.43Ω, L=120μH | Fig.19-22 | ||
EOFF | Turn-off switching energy | 182 | μJ | ||||
td(on) | Turn-on delay time | 30 | ns | ||||
tr | Rise time | 5.9 | |||||
td(off) | Turn-off delay time | 37 | |||||
tf | Fall time | 21 | |||||
LsCE | Stray inductance | 7.6 | nH |
Reverse Diode Characteristics(TC=25°C unless otherwise specified)
Symbol | Parameter | Value | Unit | Test Conditions | Note | ||
Min. | Typ. | Max. | |||||
VSD | Diode forward voltage | 4.9 | V | ISD =80A, VGS =0V | Fig.10- 12 | ||
4.5 | V | ISD =80A, VGS =0V, TJ =150°C | |||||
trr | Reverse recovery time | 17.4 | ns | VGS =-5V/+20V, ISD =60A, VR =600V, di/dt=13.28A/ns, RG(ext) =2.5Ω, L=120μH | |||
Qrr |
Reverse recovery charge | 1095 | nC | ||||
IRRM | Peak reverse recovery current | 114 | A |
NTC Thermistor Characteristics
Symbol | Parameter | Value | Unit | Test Conditions | Note | ||
Min. | Typ. | Max. | |||||
RNTC | Rated Resistance | 5 | kΩ | TNTC =25℃ | Fig.27 | ||
ΔR/R | Resistance Tolerance at 25℃ | -5 | 5 | % | |||
β25/50 | Beta Value | 3380 | K | ±1% | |||
Pmax | Power Dissipation | 5 | mW |
Typical Performance (curves)
Package Dimensions (mm)