650V 25mΩ Gen2 Automotive SiC MOSFET

Features

Applications

Outline:

Marking Diagram:

Absolute Maximum Ratings(TC=25°C unless otherwise specified)

Symbol	Parameter	Value	Unit	Test Conditions	Note
VDS	Drain-Source voltage	650	V	VGS =0V, ID =100μA
VGSmax (DC)	Maximum DC voltage	-5 to 20	V	Static (DC)
VGSmax (Spike)	Maximum spike voltage	-10 to 23	V	Duty cycle<1%, and pulse width<200ns
VGSon	Recommended turn-on voltage	18±0.5	V
VGSoff	Recommended turn-off voltage	-3.5 to -2	V
ID	Drain current (continuous)	99	A	VGS =18V, TC =25°C	Fig. 23
		72	A	VGS =18V, TC =100°C
IDM	Drain current (pulsed)	247	A	Pulse width limited by SOA	Fig. 26
PTOT	Total power dissipation	454	W	TC =25°C	Fig. 24
Tstg	Storage temperature range	-55 to 175	°C
TJ	Operating junctiontemperature	-55 to 175	°C
TL	Solder Temperature	260	°C	wave soldering only allowed at leads, 1.6mm from case for 10 s

Thermal Data

Symbol	Parameter	Value	Unit	Note
Rθ(J-C)	Thermal Resistance from Junction to Case	0.33	°C/W	Fig. 25

Electrical Characteristics(TC =25。C unless otherwise specified)

Symbol	Parameter	Value			Unit	Test Conditions	Note
Symbol	Parameter	Min.	Typ.	Max.	Unit	Test Conditions	Note
IDSS	Zero gate voltage drain current		3	100	μA	VDS =650V, VGS =0V
IGSS	Gate leakage current			±100	nA	VDS =0V, VGS = -5~20V
VTH	Gate threshold voltage	1.8	2.8	4.5	V	VGS=VDS , ID =12mA	Fig. 8, 9
VTH	Gate threshold voltage		2.0			VGS=VDS , ID =12mA @ TJ =175。C	Fig. 8, 9
RON	Static drain-source on- resistance		25	33	mΩ	VGS =18V, ID =40A @TJ =25。C	Fig. 4, 5, 6, 7
RON	Static drain-source on- resistance		38		mΩ	VGS =18V, ID =40A @TJ =175。C	Fig. 4, 5, 6, 7
Ciss	Input capacitance		3090		pF	VDS=600V, VGS =0V, f=1MHz, VAC=25mV	Fig. 16
Coss	Output capacitance		251		pF
Crss	Reverse transfer capacitance		19		pF
Eoss	Coss stored energy		52		μJ		Fig. 17
Qg	Total gate charge		125		nC	VDS =400V, ID =40A, VGS =-3 to 18V	Fig. 18
Qgs	Gate-source charge		35.7		nC
Qgd	Gate-drain charge		38.5		nC
Rg	Gate input resistance		1.5		Ω	f=1MHz
EON	Turn-on switching energy		218.8		μJ	VDS =400V, ID =40A, VGS =-3.5 to 18V, RG(ext) =3.3Ω, L=200μH TJ =25。C	Fig. 19, 20
EOFF	Turn-off switching energy		95.0		μJ
td(on)	Turn-on delay time		12.9		ns
tr	Rise time		26.5
td(off)	Turn-off delay time		23.2
tf	Fall time		11.7
EON	Turn-on switching energy		248.5		μJ	VDS =400V, ID =40A, VGS =-3.5 to 18V, RG(ext) =3.3Ω, L=200μH TJ =175。C	Fig. 22
EOFF	Turn-off switching energy		99.7		μJ		Fig. 22

Reverse Diode Characteristics(TC =25。C unless otherwise specified)

Symbol	Parameter	Value			Unit	Test Conditions	Note
Symbol	Parameter	Min.	Typ.	Max.	Unit	Test Conditions	Note
VSD	Diode forward voltage		3.7		V	ISD =20A, VGS =0V	Fig. 10, 11, 12
VSD	Diode forward voltage		3.5		V	ISD =20A, VGS =0V, TJ =175。C	Fig. 10, 11, 12
trr	Reverse recovery time		32		ns	VGS =-3.5V/+18V, ISD =40A, VR =400V, RG(ext) =7.5Ω L=200μH di/dt=3000A/μs
Qrr	Reverse recovery charge		195.3		nC
IRRM	Peak reverse recovery current		20.2		A