1700V 1000mΩ SiC MOSFET Solar inverters

Place of Origin:	Zhejiang
Brand Name:	Inventchip Technology
Model Number:	IV2Q171R0D7Z
Certification:	AEC-Q101 qualified

Features

• 2 nd Generation SiC MOSFET Technology with +15~+18V gate drive

• High blocking voltage with low on-resistance

• High speed switching with low capacitance

• 175℃ operating junction temperature capability

• Ultra fast and robust intrinsic body diode

• Kelvin gate input easing driver circuit design

• AEC-Q101 qualified

Applications

• Solar inverters

• Auxiliary power supplies

• Switch mode power supplies

• Smart meters

Outline:

 

Marking Diagram:

Absolute Maximum Ratings(TC=25°C unless otherwise specified)

Symbol	Parameter	Value	Unit	Test Conditions	Note
VDS	Drain-Source voltage	1700	V	VGS =0V, ID =10μA
VGSmax (Transient)	Maximum spike voltage	-10 to 23	V	Duty cycle <1%, and pulse width<200ns
VGSon	Recommended turn-on voltage	15 to 18	V
VGSoff	Recommended turn-off voltage	-5 to -2	V	Typical value -3.5V
ID	Drain current (continuous)	6.3	A	VGS =18V, TC =25°C	Fig. 23
		4.8	A	VGS =18V, TC =100°C
IDM	Drain current (pulsed)	15.7	A	Pulse width limited by   SOA and dynamic Rθ(J-C)	Fig.   25, 26
ISM	Body diode current (pulsed)	15.7	A	Pulse width limited by   SOA and dynamic Rθ(J-C)	Fig.   25, 26
PTOT	Total power dissipation	73	W	TC =25°C	Fig. 24
Tstg	Storage temperature range	-55 to 175	°C
TJ	Operating junctiontemperature	-55 to 175	°C

Thermal Data

Symbol	Parameter	Value	Unit	Note
Rθ(J-C)	Thermal Resistance from Junction to Case	2.05	°C/W	Fig. 25

Electrical Characteristics(TC =25°C unless otherwise specified)

Symbol	Parameter	Value			Unit	Test Conditions	Note
		Min.	Typ.	Max.
IDSS	Zero gate voltage drain current		1	10	μA	VDS =1700V, VGS =0V
IGSS	Gate leakage current			±100	nA	VDS =0V, VGS = -5~20V
VTH	Gate threshold voltage	1.8	3.0	4.5	V	VGS =VDS , ID =380uA	Fig. 8, 9
			2.0		V	VGS =VDS , ID =380uA @ TJ =175°C
RON	Static drain-source on - resistance		700 1280	910	mΩ	VGS=18V, ID =1A @TJ =25°C @TJ =175°C	Fig. 4, 5, 6, 7
			950 1450	1250	mΩ	VGS=15V, ID =1A @TJ =25°C @TJ =175°C
Ciss	Input capacitance		285		pF	VDS =1000V, VGS =0V, f=1MHz, VAC=25mV	Fig. 16
Coss	Output capacitance		15.3		pF
Crss	Reverse transfer capacitance		2.2		pF
Eoss	Coss  stored energy		11		μJ		Fig. 17
Qg	Total gate charge		16.5		nC	VDS =1000V, ID =1A, VGS =-5 to 18V	Fig. 18
Qgs	Gate-source charge		2.7		nC
Qgd	Gate-drain charge		12.5		nC
Rg	Gate input resistance		13		Ω	f=1MHz
EON	Turn-on switching energy		51.0		μJ	VDS =1000V, ID =2A, VGS =-3.5V to 18V, RG(ext) =10Ω, L=2330μH Tj=25°C	Fig. 19, 20
EOFF	Turn-off switching energy		17.0		μJ
td(on)	Turn-on delay time		4.8		ns
tr	Rise time		13.2
td(off)	Turn-off delay time		12.0
tf	Fall time		66.8
EON	Turn-on switching energy		90.3		μJ	VDS =1000V, ID =2A, VGS =-3.5V to 18V, RG(ext) =10Ω, L=2330μH Tj=175°C	Fig. 22

Reverse Diode Characteristics(TC =25。C unless otherwise specified)

Symbol	Parameter	Value			Unit	Test Conditions	Note
		Min.	Typ.	Max.
VSD	Diode forward voltage		4.0		V	ISD =1A, VGS =0V	Fig. 10, 11, 12
			3.8		V	ISD =1A, VGS =0V, TJ =175。C
IS	Diode forward current (continuous)			11.8	A	VGS =-2V, TC =25。C
				6.8	A	VGS =-2V, TC=100。C
trr	Reverse recovery time		20.6		ns	VGS=-3.5V/+18V, ISD =2A, VR =1000V, RG(ext)=10Ω  L=2330μ H di/dt=5000A/μs
Qrr	Reverse recovery charge		54.2		nC
IRRM	Peak reverse recovery current		8.2		A

Typical Performance (curves)

 

Package Dimensions

Note:

1. Package Reference: JEDEC TO263, Variation AD

2. All Dimensions are in mm

3. Subject to Change Without Notice