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1200V 40mΩ Gen2 Automotive SiC MOSFET
1200V 40mΩ Gen2 Automotive SiC MOSFET

1200V 40mΩ Gen2 Automotive SiC MOSFET

  • Introduction

Introduction

Place of Origin: Shanghai
Brand Name: Inventchip Technology
Model Number: IV2Q12040T4Z
Certification: AEC-Q101

Features

  • 2ndGeneration SiC MOSFET Technology with

  • +15~+18V gate drive

  • High blocking voltage with low on-resistance

  • High speed switching with low capacitance

  • 175°C operating junction temperature capability

  • Ultra fast and robust intrinsic body diode

  • Kelvin gate input easing driver circuit design

  • AEC-Q101 qualified

Applications

  • EV chargers and OBCs

  • Solar boosters

  • Automotive compressor inverters

  • AC/DC power supplies


Outline:

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Marking Diagram:

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Absolute Maximum Ratings(TC=25°C unless otherwise specified)

Symbol Parameter Value Unit Test Conditions Note
VDS Drain-Source voltage 1200 V VGS =0V, ID =100μA
VGSmax (Transient) Maximum transient voltage -10 to 23 V Duty cycle<1%, and pulse width<200ns
VGSon Recommended turn-on voltage 15 to 18 V
VGSoff Recommended turn-off voltage -5 to -2 V Typical -3.5V
ID Drain current (continuous) 65 A VGS =18V, TC =25°C Fig. 23
48 A VGS =18V, TC =100°C
IDM Drain current (pulsed) 162 A Pulse width limited by   SOA and dynamic Rθ(J-C) Fig.   25, 26
ISM Body diode current (pulsed) 162 A Pulse width limited by   SOA and dynamic Rθ(J-C) Fig.   25, 26
PTOT Total power dissipation 375 W TC =25°C Fig. 24
Tstg Storage temperature range -55 to 175 °C
TJ Operating junctiontemperature -55 to 175 °C
TL Solder Temperature 260 °C wave soldering only allowed at leads, 1.6mm from case for 10 s


Thermal Data

Symbol Parameter Value Unit Note
Rθ(J-C) Thermal Resistance from Junction to Case 0.4 °C/W Fig. 25


Electrical Characteristics (TC =25。C unless otherwise specified)

Symbol Parameter Value Unit Test Conditions Note
Min. Typ. Max.
IDSS Zero gate voltage drain current 5 100 μA VDS =1200V, VGS =0V
IGSS Gate leakage current ±100 nA VDS =0V, VGS = -5~20V
VTH Gate threshold voltage 1.8 2.8 4.5 V VGS =VDS , ID =9mA Fig. 8, 9
2.1 VGS =VDS , ID =9mA @ TJ =175。C
RON Static drain-source on - resistance 40 52 VGS =18V, ID =20A @TJ =25。C Fig. 4, 5, 6, 7
75 VGS =18V, ID =20A @TJ =175。C
50 65 VGS =15V, ID =20A @TJ =25。C
80 VGS =15V, ID =20A @TJ =175。C
Ciss Input capacitance 2160 pF VDS=800V, VGS =0V,   f=1MHz, VAC=25mV Fig. 16
Coss Output capacitance 100 pF
Crss Reverse transfer capacitance 5.8 pF
Eoss Coss  stored energy 40 μJ Fig. 17
Qg Total gate charge 110 nC VDS =800V, ID =30A, VGS =-3 to 18V Fig. 18
Qgs Gate-source charge 25 nC
Qgd Gate-drain charge 59 nC
Rg Gate input resistance 2.1 Ω f=1MHz
EON Turn-on switching energy 446.3 μJ VDS =800V, ID =30A, VGS =-3.5 to 18V,    RG(ext) =3.3Ω, L=200μH TJ =25。C Fig. 19, 20
EOFF Turn-off switching energy 70.0 μJ
td(on) Turn-on delay time 9.6 ns
tr Rise time 22.1
td(off) Turn-off delay time 19.3
tf Fall time 10.5
EON Turn-on switching energy 644.4 μJ VDS =800V, ID =30A, VGS =-3.5 to 18V, RG(ext) =3.3Ω,L=200μH TJ =175。C Fig. 22
EOFF Turn-off switching energy 73.8 μJ


Reverse Diode Characteristics (TC =25。C unless otherwise specified)

Symbol Parameter Value Unit Test Conditions Note
Min. Typ. Max.
VSD Diode forward voltage 4.2 V ISD =20A, VGS =0V Fig. 10, 11, 12
4.0 V ISD =20A, VGS =0V, TJ =175。C
IS Diode forward current (continuous) 63 A VGS =-2V, TC =25。C
36 A VGS =-2V, TC=100。C
trr Reverse recovery time 42.0 ns VGS=-3.5V/+18V, ISD =30A, VR =800V, RG(ext) =10Ω  L=200μH di/dt=3000A/μs
Qrr Reverse recovery charge 198.1 nC
IRRM Peak reverse recovery current 17.4 A


Typical Performance (curves)

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Package Dimensions

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Note:

1. Package Reference: JEDEC TO247, Variation AD

2. All Dimensions are in mm

3. Slot Required, Notch May Be Rounded

4. Dimension D&E Do Not Include Mold Flash

5. Subject to Change Without Notice


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