1200V 25mohm SiC MODULE Motor drivers

Place of Origin:	Zhejiang
Brand Name:	Inventchip Technology
Model Number:	IV1B12025HC1L
Certification:	AEC-Q101

Features

• High blocking voltage with low on-resistance

• High speed switching with low capacitance

• High operating junction temperature capability

• Very fast and robust intrinsic body diode

Applications

• Solar applications

• UPS system

• Motor drivers

• High voltage DC/DC converters

Package

Absolute Maximum Ratings(TC=25°C unless otherwise specified)

Symbol	Parameter	Value	Unit	Test Conditions	Note
VDS	Drain-Source voltage	1200	V	VGS =0V, ID =200μA
VGSmax (DC)	Maximum DC voltage	-5 to 22	V	Static (DC)
VGSmax (Spike)	Maximum spike voltage	-10 to 25	V	<1% duty cycle, and pulse width<200ns
VGSon	Recommended turn -on voltage	20±0.5	V
VGSoff	Recommended turn -off voltage	-3.5 to -2	V
ID	Drain current (continuous)	74	A	VGS =20V, TC =25°C
		50	A	VGS =20V, TC =94°C
IDM	Drain current (pulsed)	185	A	Pulse width limited by SOA	Fig.26
PTOT	Total power dissipation	250	W	TC =25°C	Fig.24
Tstg	Storage temperature range	-40 to 150	°C
TJ	Maximum virtual junction temperature under switching conditions	-40 to 150	°C	Operation
		-55 to 175	°C	Intermittent with reduced life

Thermal Data

Symbol	Parameter	Value	Unit	Note
Rθ(J-C)	Thermal Resistance from Junction to Case	0.5	°C/W	Fig.25

Electrical Characteristics(TC=25°C unless otherwise specified)

Symbol	Parametr	Value			Unit	Test Conditions	Note
		Min.	Typ.	Max.
IDSS	Zero gate voltage drain current		10	200	μA	VDS =1200V, VGS =0V
IGSS	Gate leakage current		2	±200	nA	VDS =0V, VGS = -5~20V
VTH	Gate threshold voltage		3.2		V	VGS=VDS , ID =12mA	Fig.9
			2.3			VGS=VDS , ID =12mA @ TC =150。C
RON	Static drain-source on - resistance		25	33	mΩ	VGS =20V, ID =40A @TJ =25。C	Fig.4-7
			36		mΩ	VGS =20V, ID =40A @TJ =150。C
Ciss	Input capacitance		5.5		nF	VDS=800V, VGS =0V, f=100kHZ , VAC =25mV	Fig.16
Coss	Output capacitance		285		pF
Crss	Reverse transfer capacitance		20		pF
Eoss	Coss  stored energy		105		μJ		Fig.17
Qg	Total gate charge		240		nC	VDS =800V, ID =40A, VGS =-5 to 20V	Fig.18
Qgs	Gate-source charge		50		nC
Qgd	Gate-drain charge		96		nC
Rg	Gate input resistance		1.4		Ω	f=100kHZ
EON	Turn-on switching energy		795		μJ	VDS =600V, ID =50A, VGS=-5 to 20V, RG(ext)on/ RG(ext)off =2.5Ω/1.43Ω, L=120μH	Fig.19-22
EOFF	Turn-off switching energy		135		μJ
td(on)	Turn-on delay time		15		ns
tr	Rise time		4.1
td(off)	Turn-off delay time		24
tf	Fall time		17
LsCE	Stray inductance		8.8		nH

Reverse Diode Characteristics(TC=25°C unless otherwise specified)

Symbol	Parameter	Value			Unit	Test Conditions	Note
		Min.	Typ.	Max.
VSD	Diode forward voltage		4.9		V	ISD =40A, VGS =0V	Fig.10- 12
			4.5		V	ISD =40A, VGS =0V, TJ =150°C
trr	Reverse recovery time		18		ns	VGS =-5V/+20V, ISD =50A, VR =600V, di/dt=14.29A/ns, RG(ext) =2.5Ω, L=120μH
Qrr	Reverse recovery charge		1068		nC
IRRM	Peak reverse recovery current		96.3		A

NTC Thermistor Characteristics

Symbol	Parameter	Value			Unit	Test Conditions	Note
		Min.	Typ.	Max.
RNTC	Rated Resistance		5		kΩ	TNTC =25℃	Fig.27
ΔR/R	Resistance Tolerance at 25℃	-5		5	%
β25/50	Beta Value		3380		K	±1%
Pmax	Power Dissipation		5		mW

Typical Performance (curves)

         

Package Dimensions (mm)

Notes

For further information please contact IVCT’s Sales Office.

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The information in this document is subject to change without notice.

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