SiC SBD

1200V 10A SiC Schottky Diode AC/DC Converters

Introduction

Introduction

Place of Origin:	Zhejiang
Brand Name:	Inventchip Technology
Model Number:	IV1D12010T2
Certification:

Minimumpacking Quantity:	450PCS
Price:
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Features

Max Junction Temperature 175°C
High Surge Current Capacity
Zero Reverse Recovery Current
Zero Forward Recovery Voltag
High-Frequency Operation
emperature independent switching behavior
Positive Temperature Coefficient on VF

Applications

Solar Power Boost
Inverter Free Wheeling Diodes
Vienna 3-Phase PFC
AC/DC Converters
Switch Mode Power Supplies

Outline

Marking Diagram

Absolute Maximum Ratings(Tc=25°C unless otherwise specified)

Symbol	Parameter	Value	Unit
VRRM	Reverse voltage (repetitive peak)	1200	V
VDC	DC blocking voltage	1200	V
IF	Forward current (continuous) @Tc=25°C	30	A
	Forward current (continuous) @Tc=135°C	15.2	A
	Forward current (continuous) @Tc=155°C	10	A
IFSM	Surge non-repetitive forward current sine halfwave @Tc=25°C tp=10ms	72	A
IFRM	Surge repetitive forward current (Freq=0.1Hz, 100cycles) sine halfwave @Tamb =25°C tp=10ms	56	A
Ptot	Total power dissipation @ Tc=25°C	176	W
	Total power dissipation @ Tc=150°C	29
	I2t value @Tc=25°C tp=10ms	26	A2s
Tstg	Storage temperature range	-55 to 175	°C
Tj	Operating junction temperature range	-55 to 175	°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

Electrical Characteristics

Symbol	Parameter	Typ.	Max.	Unit	Test Conditions	Note
VF	Forward Voltage	1.48	1.7	V	IF = 10 A TJ =25°C	Fig. 1
		2.0	3.0		IF = 10 A TJ =175°C
IR	Reverse Current	1	100	μA	VR = 1200 V TJ =25°C	Fig. 2
		10	250		VR = 1200 V TJ =175°C
C	Total Capacitance	575		pF	VR = 1 V, TJ = 25°C, f = 1 MHz	Fig. 3
		59			VR = 400 V, TJ = 25˚C, f = 1 MHz
		42.5			VR = 800 V, TJ = 25˚C, f = 1 MHz
QC	Total Capacitive Charge	62		nC	VR = 800 V, TJ = 25°C, Qc = C(v)dv	Fig. 4
EC	Capacitance Stored Energy	16.8		μJ	VR = 800 V, TJ = 25°C, Ec = C(v) ⋅vdv	Fig. 5