1700V 1000mΩ Auxiliary power supplies SiC MOSFET

Features

⚫ 2 nd Generation SiC MOSFET Technology with

+15~+18V gate drive

⚫ High blocking voltage with low on-resistance

⚫ High speed switching with low capacitance

⚫ 175℃ operating junction temperature capability

⚫ Ultra fast and robust intrinsic body diode

⚫ Kelvin gate input easing driver circuit design

Applications

⚫ Solar inverters

⚫ Auxiliary power supplies

⚫ Switch mode power supplies

⚫ Smart meters

Outline:

Marking Diagram:

Absolute Maximum Ratings (TC=25°C unless otherwise specified)

Symbol	Parameter	Value	Unit	Test Conditions	Note
VDS	Drain-Source voltage	1700	V	VGS=0V, ID=10μA
VGSmax (Transient)	Maximum spike voltage	-10 to 23	V	Duty cycle <1%, and pulse width<200ns
VGSon	Recommended turn-on voltage	15 to 18	V
VGSoff	Recommended turn-off voltage	-5 to -2	V	Typical value -3.5V
ID	Drain current (continuous)	6.3	A	VGS=18V, TC=25°C	Fig. 23
ID	Drain current (continuous)	4.8	A	VGS=18V, TC=100°C	Fig. 23
IDM	Drain current (pulsed)	15.7	A	Pulse width limited by SOA and dynamic Rθ(J-C)	Fig. 25, 26
ISM	Body diode current (pulsed)	15.7	A	Pulse width limited by SOA and dynamic Rθ(J-C)	Fig. 25, 26
PTOT	Total power dissipation	73	W	TC=25°C	Fig. 24
Tstg	Storage temperature range	-55 to 175	°C
TJ	Operating junction temperature	-55 to 175	°C

Thermal Data

Symbol	Parameter	Value	Unit	Note
Rθ(J-C)	Thermal Resistance from Junction to Case	2.05	°C/W	Fig. 25

Electrical Characteristics (TC=25°C unless otherwise specified)

Symbol	Parameter	Value			Unit	Test Conditions	Note
Symbol	Parameter	Min.	Typ.	Max.	Unit	Test Conditions	Note
IDSS	Zero gate voltage drain current		1	10	μA	VDS=1700V, VGS=0V
IGSS	Gate leakage current			±100	nA	VDS=0V, VGS=-5~20V
VTH	Gate threshold voltage	1.8	3.0	4.5	V	VGS=VDS, ID=380uA	Fig. 8, 9
VTH	Gate threshold voltage		2.0		V	VGS=VDS, ID=380uA @ TJ=175°C	Fig. 8, 9
RON	Static drain-source on resistance		700 1280	910	mΩ	VGS=18V, ID=1A @TJ=25°C @TJ=175°C	Fig. 4, 5, 6, 7
RON	Static drain-source on resistance		950 1450	1250	mΩ	VGS=15V, ID=1A @TJ=25°C @TJ=175°C	Fig. 4, 5, 6, 7
Ciss	Input capacitance		285		pF	VDS=1000V, VGS=0V, f=1MHz, VAC=25mV	Fig. 16
Coss	Output capacitance		15.3		pF
Crss	Reverse transfer capacitance		2.2		pF
Eoss	Coss stored energy		11		μJ		Fig. 17
Qg	Total gate charge		16.5		nC	VDS=1000V, ID=1A, VGS=-5 to 18V	Fig. 18
Qgs	Gate-source charge		2.7		nC
Qgd	Gate-drain charge		12.5		nC
Rg	Gate input resistance		13		Ω	f=1MHz
EON	Turn-on switching energy		51.0		μJ	VDS=1000V, ID=2A, VGS=-3.5V to 18V, RG(ext)=10Ω, L=2330μH Tj=25°C	Fig. 19, 20
EOFF	Turn-off switching energy		17.0		μJ
td(on)	Turn-on delay time		4.8		ns
tr	Rise time		13.2
td(off)	Turn-off delay time		12.0
tf	Fall time		66.8
EON	Turn-on switching energy		90.3		μJ	VDS=1000V, ID=2A, VGS=-3.5V to 18V, RG(ext)=10Ω, L=2330μH Tj=175°C	Fig. 22
EOFF	Turn-off switching energy		22.0		μJ		Fig. 22

Reverse Diode Characteristics (TC=25°C unless otherwise specified)

Symbol	Parameter	Value			Unit	Test Conditions	Note
Symbol	Parameter	Min.	Typ.	Max.	Unit	Test Conditions	Note
VSD	Diode forward voltage		4.0		V	ISD=1A, VGS=0V	Fig. 10, 11, 12
VSD	Diode forward voltage		3.8		V	ISD=1A, VGS=0V, TJ=175°C	Fig. 10, 11, 12
IS	Diode forward current (continuous)			11.8	A	VGS=-2V, TC=25°C
IS	Diode forward current (continuous)			6.8	A	VGS=-2V, TC=100°C
trr	Reverse recovery time		20.6		ns	VGS=-3.5V/+18V, ISD=2A, VR=1000V, RG(ext)=10Ω L=2330μH di/dt=5000A/μs
Qrr	Reverse recovery charge		54.2		nC
IRRM	Peak reverse recovery current		8.2		A