1200V 30mΩ Gen2 Automotive SiC MOSFET

Features

Applications

Outline:

Marking Diagram:

Absolute Maximum Ratings(TC=25°C unless otherwise spec2ified)

Symbol	Parameter	Value	Unit	Test Conditions	Note
VDS	Drain-Source voltage	1200	V	VGS =0V, ID =100μA
VGSmax (DC)	Maximum DC voltage	-5 to 20	V	Static (DC)
VGSmax (Spike)	Maximum spike voltage	-10 to 23	V	Duty cycle<1%, and pulse width<200ns
VGSon	Recommended turn-on voltage	18±0.5	V
VGSoff	Recommended turn-off voltage	-3.5 to -2	V
ID	Drain current (continuous)	79	A	VGS =18V, TC =25°C	Fig. 23
		58	A	VGS =18V, TC =100°C
IDM	Drain current (pulsed)	198	A	Pulse width limited by SOA	Fig. 26
PTOT	Total power dissipation	395	W	TC =25°C	Fig. 24
Tstg	Storage temperature range	-55 to 175	°C
TJ	Operating junctiontemperature	-55 to 175	°C
TL	Solder Temperature	260	°C	wave soldering only allowed at leads, 1.6mm from case for 10 s

Thermal Data

Symbol	Parameter	Value	Unit	Note
Rθ(J-C)	Thermal Resistance from Junction to Case	0.38	°C/W	Fig. 23

Electrical Characteristics(TC =25。C unless otherwise specified)

Symbol	Parameter	Value			Unit	Test Conditions	Note
Symbol	Parameter	Min.	Typ.	Max.	Unit	Test Conditions	Note
IDSS	Zero gate voltage drain current		5	100	μA	VDS =1200V, VGS =0V
IGSS	Gate leakage current			±100	nA	VDS =0V, VGS = -5~20V
VTH	Gate threshold voltage	1.8	2.8	4.5	V	VGS=VDS , ID =12mA	Fig. 8, 9
VTH	Gate threshold voltage		2.0			VGS=VDS , ID =12mA @ TJ =175。C	Fig. 8, 9
RON	Static drain-source on - resistance		30	39	mΩ	VGS =18V, ID =30A @TJ =25。C	Fig. 4, 5, 6, 7
			55		mΩ	VGS =18V, ID =30A @TJ =175。C
			36	47	mΩ	VGS =15V, ID =30A @TJ =25。C
			58		mΩ	VGS =15V, ID =30A @TJ =175。C
Ciss	Input capacitance		3000		pF	VDS=800V, VGS =0V, f=1MHz, VAC=25mV	Fig. 16
Coss	Output capacitance		140		pF
Crss	Reverse transfer capacitance		7.7		pF
Eoss	Coss stored energy		57		μJ		Fig. 17
Qg	Total gate charge		135		nC	VDS =800V, ID =40A, VGS =-3 to 18V	Fig. 18
Qgs	Gate-source charge		36.8		nC
Qgd	Gate-drain charge		45.3		nC
Rg	Gate input resistance		2.3		Ω	f=1MHz
EON	Turn-on switching energy		856.6		μJ	VDS =800V, ID =40A, VGS =-3.5 to 18V, RG(ext) =3.3Ω, L=200μH TJ =25。C	Fig. 19, 20
EOFF	Turn-off switching energy		118.0		μJ
td(on)	Turn-on delay time		15.4		ns
tr	Rise time		24.6
td(off)	Turn-off delay time		28.6
tf	Fall time		13.6

Reverse Diode Characteristics(TC =25。C unless otherwise specified)

Symbol	Parameter	Value			Unit	Test Conditions	Note
Symbol	Parameter	Min.	Typ.	Max.	Unit	Test Conditions	Note
VSD	Diode forward voltage		4.2		V	ISD =30A, VGS =0V	Fig. 10, 11, 12
VSD	Diode forward voltage		4.0		V	ISD =30A, VGS =0V, TJ =175。C	Fig. 10, 11, 12
trr	Reverse recovery time		54.8		ns	VGS=-3.5V/+18V, ISD =40A, VR =800V, RG(ext) =13Ω L=200μH di/dt=3000A/μs
Qrr	Reverse recovery charge		470.7		nC
IRRM	Peak reverse recovery current		20.3		A