1200V 160mΩ Gen2 Automotive SiC MOSFET

Features

Applications

Outline:

Marking Diagram:

Absolute Maximum Ratings(TC=25°C unless otherwise specified)

Symbol	Parameter	Value	Unit	Test Conditions	Note
VDS	Drain-Source voltage	1200	V	VGS =0V, ID =100μA
VGSmax (DC)	Maximum DC voltage	-5 to 20	V	Static (DC)
VGSmax (Spike)	Maximum spike voltage	-10 to 23	V	Duty cycle<1%, and pulse width<200ns
VGSon	Recommended turn-on voltage	18±0.5	V
VGSoff	Recommended turn-off voltage	-3.5 to -2	V
ID	Drain current (continuous)	19	A	VGS =18V, TC =25°C	Fig. 23
		14	A	VGS =18V, TC =100°C
IDM	Drain current (pulsed)	47	A	Pulse width limited by SOA	Fig. 26
PTOT	Total power dissipation	136	W	TC =25°C	Fig. 24
Tstg	Storage temperature range	-55 to 175	°C
TJ	Operating junctiontemperature	-55 to 175	°C
TL	Solder Temperature	260	°C	wave soldering only allowed at leads, 1.6mm from case for 10 s

Thermal Data

Symbol	Parameter	Value	Unit	Note
Rθ(J-C)	Thermal Resistance from Junction to Case	1.1	°C/W	Fig. 25

Electrical Characteristics(TC =25。C unless otherwise specified)

Symbol	Parameter	Value			Unit	Test Conditions	Note
		Min.	Typ.	Max.
IDSS	Zero gate voltage drain current		5	100	μA	VDS =1200V, VGS =0V
IGSS	Gate leakage current			±100	nA	VDS =0V, VGS = -5~20V
VTH	Gate threshold voltage	1.8	2.8	4.5	V	VGS =VDS , ID =2mA	Fig. 8, 9
			2.1			VGS =VDS , ID =2mA @ TJ =175。C
RON	Static drain-source on - resistance		160	208	mΩ	VGS =18V, ID =5A @TJ =25。C	Fig. 4, 5, 6, 7
			285		mΩ	VGS =18V, ID =5A @TJ =175。C
Ciss	Input capacitance		575		pF	VDS=800V, VGS =0V, f=1MHz, VAC=25mV	Fig. 16
Coss	Output capacitance		34		pF
Crss	Reverse transfer capacitance		2.3		pF
Eoss	Coss stored energy		14		μJ		Fig. 17
Qg	Total gate charge		29		nC	VDS =800V, ID =10A, VGS =-3 to 18V	Fig. 18
Qgs	Gate-source charge		6.6		nC
Qgd	Gate-drain charge		14.4		nC
Rg	Gate input resistance		10		Ω	f=1MHz
EON	Turn-on switching energy		115		μJ	VDS =800V, ID =10A, VGS =-3.5 to 18V, RG(ext) =3.3Ω, L=300μH TJ =25。C	Fig. 19, 20
EOFF	Turn-off switching energy		22		μJ
td(on)	Turn-on delay time		2.5		ns
tr	Rise time		9.5
td(off)	Turn-off delay time		7.3
tf	Fall time		11.0
EON	Turn-on switching energy		194		μJ	VDS =800V, ID =10A, VGS =-3.5 to 18V, RG(ext) =3.3Ω, L=300μH TJ =175。C	Fig. 22
EOFF	Turn-off switching energy		19		μJ

Reverse Diode Characteristics(TC =25。C unless otherwise specified)

Symbol	Parameter	Value			Unit	Test Conditions	Note
Symbol	Parameter	Min.	Typ.	Max.	Unit	Test Conditions	Note
VSD	Diode forward voltage		4.0		V	ISD =5A, VGS =0V	Fig. 10, 11, 12
VSD	Diode forward voltage		3.7		V	ISD =5A, VGS =0V, TJ =175。C	Fig. 10, 11, 12
trr	Reverse recovery time		26		ns	VGS =-3.5V/+18V, ISD =10A, VR =800V, RG(ext) =15Ω L=300μH di/dt=3000A/μs
Qrr	Reverse recovery charge		92		nC
IRRM	Peak reverse recovery current		10.6		A